Kurzinfo: Allied Telesis AT AR442S - Router - DSL - 5-Port-Switch - Frame Relay, X.25 Gruppe Bridges & Router Hersteller Allied Telesis Hersteller Art. Nr. AT-AR442S-50 Modell AT AR442S EAN/UPC 0767035183657 Produktbeschreibung: Allied Telesis AT AR442S - Router - DSL - Desktop Gerätetyp Router - DSL-Modem - 5-Port-Switch (integriert) Art Desktop - 1U Digital Signaling Protocol SHDSL Data Link Protocol Ethernet, Fast Ethernet, Frame Relay, X.25 Datenübertragungsrate 100 Mbps Netzwerk/Transportprotokoll AppleTalk, L2TP, RSVP, IP/IPX, IPSec, PPPoE, PPPoA, IPoA Routing Protocol OSPF, RIP-1, RIP-2, IGMPv2, DVMRP, VRRP, OSPFv2, PIM-SM, PIM-DM, GRE Remoteverwaltungsprotokoll SNMP 3, HTTP Leistungsmerkmale DMZ port, DHCP Support, NAT Support, VPN-Support, IGMP Snooping, Stateful Packet Inspection (SPI) Produktzertifizierungen IEEE 802.1Q, IEEE 802.1x Abmessungen (Breite x Tiefe x Höhe) 35.5 cm x 18 cm x 4.4 cm Lokalisierung Europa Ausführliche Details Allgemein Gerätetyp Router - 5-Port-Switch
This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.